Press Releases

SanDisk And Toshiba Announce The Development Of Highest Density NAND Flash Memory

2000年 9月 25日

Jointly Developed 512 Megabit NAND Flash To Start Customer Sampling In Q4, Will Increase Capacity, Performance Of Flash Data Storage Products

SUNNYVALE, CA, Sept. 25, 2000-SanDisk Corporation (NASDAQ: SNDK) and Toshiba Corporation issued a joint statement today that they have completed the joint development of the industry's highest capacity NAND flash memory single-chip 512-megabit (Mbit) device. The new chip will expand SanDisk's and Toshiba's line-up of high capacity flash memories and flash card products. The 512Mbit device is the first result of the joint development partnership announced between the two companies on May 9, 2000.        

Both companies will independently market the 512Mbit chip to their respective customers. Use of the device is expected to greatly expand the capabilities of cell phones, digital cameras, MP3 audio players and other products that use embedded flash or removable flash cards for data storage. 

The new 512Mbit chip is based on Toshiba's advanced 0.16 micron process technology. Initial production will be at Toshiba's advanced production facility at Yokkaichi, Japan. The 512Mbit will also be the first NAND chip to be produced at the Dominion Semiconductor, Virginia manufacturing facility under the FlashVision company jointly established by Toshiba and SanDisk for this purpose. Dominion is on schedule for starting 0.16micron NAND production by midyear 2001, as planned. 

Future SanDisk flash card products which utilize the new 512Mbit NAND chip have been specially designed to have significantly higher write performance.  

"We are extremely pleased with this jointly developed leading edge flash memory technology," said Sanjay Mehrotra, SanDisk senior vice president of engineering. "Even though SanDisk's engineers joined this program while it was already in the advanced stage of development, the cooperation between SanDisk and Toshiba has been mutually open and exceptionally productive. This first result of our long-term strategic agreement significantly raises the bar for the competition. The new 0.16 micron NAND technology will serve as an excellent platform for other advanced NAND products that are currently under joint development. We believe the 512Mbit NAND will bring tremendous benefits to our customers and allow SanDisk and Toshiba to maintain our respective market leadership positions in the growing flash storage markets we address." 

SanDisk Corporation, the world's largest supplier of flash data storage products, designs, manufactures and markets industry-standard, solid-state data, digital imaging and audio storage products using its patented, high density flash memory and controller technology. SanDisk is based in Sunnyvale, CA. 

The matters discussed in this news release contain forward looking statements that are subject to certain risks and uncertainties including the ability of the companies to manufacture products using MLC technology in various flash technology platforms, competition from other technologies, timely and uninterrupted supply of products and materials from various suppliers and third party manufacturers, as well as other factors. Other risk factors for SanDisk include those items described under the caption, "Risk Factors" in SanDisk's annual report on Form 10K and quarterly reports on Form 10Q, filed with the Securities and Exchange Commission. The companies assume no obligation to update the information in this release.

媒體聯絡資訊

SanDisk 媒體聯絡人

press@sandisk.com